Исправление greenman, (текущая версия) :
https://www.micron.com/~/media/documents/products/technical-note/solid-state-...
Second, while NAND Flash devices can be written a single page at a time (a page is typically 4KiB–16KiB), NAND Flash devices can only be erased one block at a time; and a block (also known as a «NAND block» or an «erase block») can contain hundreds of pages.
Calculating the Write Amplification Factor
...
WAF = 1+(Attrib 248/Attrib 247)
1 + 64509752994/2611998525 ~ 25,7
P.S. Не очень понимаю, зачем там к (Attrib 248/Attrib 247) добавляется 1. Но, в данном случае, ни на что не влияет.
Исправление greenman, :
https://www.micron.com/~/media/documents/products/technical-note/solid-state-...
Second, while NAND Flash devices can be written a single page at a time (a page is typically 4KiB–16KiB), NAND Flash devices can only be erased one block at a time; and a block (also known as a «NAND block» or an «erase block») can contain hundreds of pages.
Calculating the Write Amplification Factor
...
WAF = 1+(Attrib 248/Attrib 247)
1 + 64509752994/2611998525 ~ 25,7
P.S. Не очень понимаю, зачем там к (Attrib 248/Attrib 247) добавляется 1. Но, в общем, ни на что не влияет.
Исходная версия greenman, :
https://www.micron.com/~/media/documents/products/technical-note/solid-state-...
Second, while NAND Flash devices can be written a single page at a time (a page is typically 4KiB–16KiB), NAND Flash devices can only be erased one block at a time; and a block (also known as a «NAND block» or an «erase block») can contain hundreds of pages.
Calculating the Write Amplification Factor
...
WAF = 1+(Attrib 248/Attrib 247)
1 + 64509752994/2611998525 ~ 25,7